US 2019/0170509 A1 · Pattern Measurement Method and Pattern Measurement Device

Abstract

The purpose of the present invention is to provide a pattern measurement method and a pattern measurement device, whereby high-precision measurement of a pattern in a depth direction thereof is realized. Provided are a pattern measurement method and device, the pattern measurement method having a step for forming an inclined plane in a sample region including a circuit element having a deep hole, a deep groove, or a three-dimensional structure by focused ion beam irradiation, setting the field of view of a scanning electron microscope so as to include a boundary between the inclined plane and the sample surface, acquiring an image of the field of view on the basis of a detection signal obtained by scanning an electron beam toward the field of view, specifying a first position which is the boundary between the inclined plane and a non-inclined plane and a second position which is the position of a desired deep hole or deep groove positioned in the inclined plane using the acquired image, and calculating the height-direction dimension of a pattern constituting the circuit element having the deep hole, deep groove, or three-dimensional structure on the basis of a dimension in the sample surface direction between the first position and the second position and the angle of the inclined plane.

Claims9

Dependent claims

A pattern measurement method that acquires information on a pattern formed on a sample on the basis of scanning of a charged particle beam, the method comprising:

forming a first inclined plane by irradiating an ion beam to a sample area including at least a first pattern and a second pattern different from the first pattern;
acquiring a detection signal by scanning the charged particle beam to an area including the first pattern and the second pattern after the inclined plane is formed;
obtaining an x coordinate and a y coordinate of each position of edges of the first pattern and the second pattern on the inclined plane on the basis of the detection signal and pitch information on the first pattern and the second pattern;
and
obtaining a z coordinate of each position on the basis of any one of angle information on the inclined plane, the x coordinate, and the y coordinate.

2 more elements

A pattern measurement device including an arithmetic processing device that calculates information on a pattern formed on a sample on the basis of scanning of a charged particle beam, wherein

the arithmetic processing device obtains x coordinate information and y coordinate information on each position of edges of a first pattern and a second pattern from a detection signal obtained by scanning the charged particle beam to an area, which is a first inclined plane formed by irradiating an ion beam to a sample area including at least the first pattern and the second pattern different from the first pattern and includes the first pattern and the second pattern,
obtains z coordinate information on each position of the edge of the first pattern on the basis of any one of the x coordinate information and the y coordinate information on each position of the edge of the first pattern and angle information on the first inclined plane, and
obtains z coordinate information on each position of the edge of the second pattern on the basis of any one of the x coordinate information and the y coordinate information on each position of the edge of the second pattern, the angle information on the inclined plane, and pitch information on the first pattern and the second pattern.

Dependencies are inferred from the claim text.

Pattern Measurement Method and Pattern Measurement Device

Life of this patent

Pattern Measurement Method and Pattern Measurement Device

Life of this patent

Abstract

Claims9