Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal

A member for an apparatus for manufacturing a semiconductor single crystal including a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, wherein

• in the tantalum carbide coated film, intensity of an X-ray diffraction line corresponding to a (200) plane with respect to an out-of-plane direction is larger than the intensity of the X-ray diffraction line corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

A method for manufacturing a tantalum carbide coated carbon material, comprising:

• preparing a carbon base material having an arithmetic surface roughness Ra of 4.0 μm or less;
• and
• coating at least a part of a surface of the carbon base material with a tantalum carbide coated film.