US 2019/0169767 A1 · DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

Abstract

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Claims20

Dependent claims

A method for reducing arsenic outgassing, comprising:

transferring a substrate from an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate to a degassing chamber for reducing arsenic outgassing on the substrate;
providing a flow of hydrogen or nitrogen gas into the degassing chamber;
ceasing the flow of hydrogen or nitrogen gas into the degassing chamber;
flowing a mixture of oxygen and nitrogen gas into the degassing chamber to reduce arsenic outgassing on the substrate to a first amount of arsenic;
ceasing the flow of oxygen and nitrogen gas into the degassing chamber;
flowing a chlorine-containing gas into the degassing chamber to clean the degassing chamber after the substrate is removed;
and
ceasing the flow of the chlorine-containing gas into the degassing chamber.

5 more elements

A method for reducing arsenic outgassing, comprising:

depositing an arsenic-containing material on a first substrate in an epitaxial deposition chamber;
transferring the first substrate from the epitaxial deposition chamber to a degassing chamber;
reducing arsenic outgassing on the first substrate, wherein the reducing arsenic outgassing comprises:
providing a flow of hydrogen or nitrogen gas into the degassing chamber;
ceasing the flow of hydrogen or nitrogen gas into the degassing chamber;
flowing a mixture of oxygen and nitrogen gas into the degassing chamber to reduce arsenic outgassing on the first substrate to a first amount of arsenic;
ceasing the flow of oxygen and nitrogen gas into the degassing chamber;
flowing a chlorine-containing gas into the degassing chamber to clean the degassing chamber after the substrate is removed;
ceasing the flow of the chlorine-containing gas into the degassing chamber;
and
detecting the first amount of arsenic outgassing using an arsenic detecting device;
and
depositing an arsenic-containing material on a second substrate in the epitaxial deposition chamber while reducing arsenic outgassing on the first substrate in the degassing chamber.

10 more elements

Dependencies are inferred from the claim text.

Degassing chamber for arsenic related processes

Life of this patent

Degassing chamber for arsenic related processes

Life of this patent

Abstract

Claims20