Heating stage and apparatus having the same

A heating stage, comprising:

• a pedestal, having a first main surface and a second main surface opposite to the first main surface;
• a thermal-conductive plate, located on the first main surface of the pedestal, wherein the thermal-conductive plate has a central portion and an edge portion surrounding the central portion, the edge portion comprises a first portion and a second portion connected to the first portion, wherein the first portion is sandwiched between the central portion and the second portion, wherein a height of the second portion gradually decreases along a direction from the central portion toward the edge portion;
• a supporting shaft, located on the second main surface of the pedestal, wherein the pedestal is located between the thermal-conductive plate and the supporting shaft;
• and
• a through pipe, embedded in the supporting shaft.

An apparatus for processing a semiconductor wafer, comprising:

• a housing, having a top surface, a bottom surface opposite to the top surface, and a sidewall connecting the top surface and the bottom surface;
• a shower head, located inside the housing and located on the top surface;
• and
• a heating stage, at least partially located inside the housing and located on the bottom surface, wherein the heating stage comprises a pedestal and a thermal-conductive plate located on the pedestal, wherein the thermal-conductive plate has a central portion and an edge portion surrounding the central portion, and the edge portion comprises a first portion and a second portion connected to the first portion, wherein the first portion is sandwiched between the central portion and the second portion, and a height of the second portion gradually decreases along a direction from the central portion toward the edge portion.