Sputtering method
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsTAKAFUMI OKUMA, DAISUKE SUETSUGU, TAKAHIDE HIRASAKI
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Abstract
To provide a sputtering method as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, in which film deposition conditions are narrowed down from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.
Claims6
A sputtering method of an amorphous nitride thin film as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, comprising:
- pulsing a waveform of electric current from a DC power supply at the time of generating plasma;
- and
- applying the pulsed electric current to the target material,
- wherein a pulse frequency of the waveform of the pulsed electric current is 10 kHz or more to 50 kHz of less, a ratio of a period in which a voltage is applied in one pulse period is 0.1% or more to 30% or less, a period in which the pulse is not applied is 15 microseconds or more and a sputtering pressure is 0.1 Pa or more to 0.3 Pa or less.
Dependencies are inferred from the claim text.