Method for Forming Hermetic Seals in MEMS Devices

A microelectromechanical system, comprising:

• a first wafer, the first wafer comprising:
• a first side having a peripheral region surrounding a central region,
• a second side opposite the first side, and
• one or more depressions disposed within the peripheral region of first side of the first wafer, each of the one or more depressions including edges;
• one or more adhesive metals disposed within the one or more depressions;
• indium disposed on the one or more adhesive metals;
• and
• a second wafer bonded to the first side of the first wafer via the indium, wherein the indium is compressed between the first wafer and the second wafer such that the edges of the one or more depressions form shear points for the indium.

A method for forming a low temperature bond between wafers, the method comprising:

• spinning a resist onto a peripheral region of a first side of a first wafer;
• forming one or more pathways into the resist;
• etching one or more depressions into the first side of the first wafer through the one or more pathways;
• depositing one or more adhesion metals into the one or more depressions;
• bonding a second wafer to a second side of the first wafer via a high temperature bond;
• depositing indium within the depressions and onto the adhesion metals deposited within the depressions such that the indium extends out from the one or more depressions;
• and
• bonding a third wafer to the first side of the first wafer by compressing the indium between a third wafer and the first side of the first wafer.