Loading patent…
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsBainian Qian, Kancharla-Arun K. Reddy, George C. Jacob, Marty W. DeGroot
Estimating the term…
A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.
A chemical mechanical (CMP) polishing pad for polishing a substrate chosen from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate comprises a polishing layer adapted for polishing the substrate which is a polyurethane reaction product of a reaction mixture comprising (i) a curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and (ii) a polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%.
Dependencies are inferred from the claim text.