Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment

A method of preparing a multilayer structure, the method comprising:

• bonding a donor dielectric layer on a front surface of a single crystal silicon donor substrate to a handle dielectric layer on a front surface of a single crystal silicon handle substrate to thereby form a bonded structure, wherein (i) the single crystal silicon handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal silicon handle substrate and the other of which is a back surface of the single crystal silicon handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal silicon handle substrate, a central plane between the front surface and the back surface of the single crystal silicon handle substrate, and a bulk region between the front and back surfaces of the single crystal silicon handle substrate and (ii) the single crystal silicon donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the silicon donor substrate and the other of which is a back surface of the silicon donor substrate, a circumferential edge joining the front and back surfaces of the silicon donor substrate, a central plane between the front and back surfaces of the silicon donor substrate, and a bulk region between the front and back surfaces of the silicon donor substrate, and further wherein the single crystal silicon donor substrate comprises a cleave plane;
• and
• annealing the bonded structure at a temperature and for a duration sufficient to strengthen the bond between the donor dielectric layer of the single crystal silicon donor substrate and the front surface of the single crystal silicon handle substrate, wherein annealing occurs at a temperature between about 300° C. and about 700° C., and at a pressure between about 0.5 MPa and about 200 MPa.