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US 2019/0158086 A1Published application
Half bridge driver circuits
AssigneeNavitas Semiconductor Limited
InventorsDaniel Marvin Kinzer, Santosh Sharma, Ju Zhang
Life of this patent
Estimating the term…
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.
Claims20
A half bridge GaN circuit, comprising:
- a low side circuit, comprising:
- a low side switch comprising a low side switch control gate, a first source, and a first drain, and
- a low side switch driver, configured to control a conductivity state of the low side switch according to a first input signal;
- a high side circuit, comprising:
- a high side switch comprising a high side switch control gate, a second source, and a second drain, wherein the second source is connected to the first drain, and
- a high side switch driver referenced to a voltage at the second source, wherein the high side switch driver is configured to control a conductivity state of the high side switch according to a second input signal,
- wherein the high side switch driver is, configured to prevent a change of conductivity state of the high side switch in response to voltage transients of the voltage of the second source,
- wherein the low side circuit further comprises a level shift circuit configured to receive the second input signal and to generate a level shift signal configured to control an output state of the high side switch driver.
5 more elements
(canceled)
A half bridge GaN circuit, comprising:
- a low side circuit, comprising:
- a low side switch comprising a low side switch control gate, a first source, and a first drain, and
- a low side switch driver, configured to control a conductivity state of the low side switch according to a first input signal;
- a high side circuit, comprising:
- a high side switch comprising a high side switch control gate, a second source, and a second drain, wherein the second source is connected to the first drain, and
- a high side switch driver referenced to a voltage at the second source, wherein the high side switch driver is configured to control a conductivity state of the high side switch according to a plurality of pulses, and wherein durations of on and off times of the high side switch are based on durations of the pulses,
- wherein the low side circuit further comprises a level shift circuit configured to generate the pulses in response to a second input signal.
4 more elements
(canceled)
A half bridge GaN circuit, comprising:
- a low side circuit, comprising:
- a low side switch comprising a low side switch control gate, a first source, and a first drain, and
- a low side switch driver, configured to control a conductivity state of the low side switch according to a first input signal;
- a high side circuit, comprising:
- a high side switch comprising a high side switch control gate, a second source, and a second drain, wherein the second source is connected to the first drain, and
- a high side switch driver referenced to a voltage at the second source, wherein the high side switch driver is configured to control a conductivity state of the high side switch according to a second input signal, and
- a trigger circuit configured to, in response to a voltage of a first power supply referenced to the voltage of the second source being less than a threshold greater than the voltage of the second source, cause the high side switch to turn-off,
- wherein the low side circuit further comprises a level shift circuit configured to receive the second input signal and to generate a level shift signal configured to control an output state of the high side switch driver.
5 more elements
(canceled)
Dependencies are inferred from the claim text.