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US 2019/0158083 A1Published application
Drive circuit and power module including the same
AssigneeMitsubishi Electric Corporation
InventorTakeshi HORIGUCHI
Life of this patent
Estimating the term…
Abstract
A drive circuit turns on an NPN transistor and a transistor in response to a turn-on command in a control signal to supply a positive current to a gate of a power transistor, and turns off the transistor after lapse of a certain time period to lower gate driving capability. The drive circuit turns on a PNP transistor and a transistor in response to a turn-off command in the control signal to supply a negative current to the gate of the power transistor, and turns off the transistor after lapse of a certain time period to lower gate driving capability.
Claims16
1-14. (canceled)
15:
- A drive circuit configured to drive a power transistor in response to a control signal, the drive circuit comprising:
- a current detector configured to detect a gate current of the power transistor;
- and
- a control circuit configured to operate based on a result of detection by the current detector and to lower gate driving capability of the drive circuit in response to lapse of a time period from a time point when the gate current reaches a first predetermined current value until appearance of a first Miller period.
1 more element
16:
- The drive circuit according to claim 15, wherein
- the control circuit is configured to lower the gate driving capability of the drive circuit in response to lapse of a time period from a time point when the gate current reaches a second predetermined current value until appearance of a second Miller period.
17:
- The drive circuit according to claim 15, wherein
- the current detector is configured to detect the gate current based on a voltage across terminals of a resistor element located in a current path through which the gate current flows.
18:
- The drive circuit according to claim 16, wherein
- the current detector is configured to detect the gate current based on a voltage across terminals of a resistor element located in a current path through which the gate current flows.
19:
- The drive circuit according to claim 15, wherein
- the control circuit is configured to determine the time period from the time point when the gate current reaches the first predetermined current value until appearance of the first Miller period in response to an event in which an amount of charges accumulated at a gate of the power transistor that is obtained by integrating an output signal of the current detector reaches an amount of gate charges to be detected when the first period appears.
20:
- The drive circuit according to claim 16, wherein
- the control circuit is configured to determine the time period from the time point when the gate current reaches the first predetermined current value until appearance of the first Miller period in response to an event in which an amount of charges accumulated at a gate of the power transistor that is obtained by integrating an output signal of the current detector reaches an amount of gate charges to be detected when the first Miller period appears.
21:
- The drive circuit according to claim 17, wherein
- the control circuit is configured to determine the time period from the time point when the gate current reaches the first predetermined current value until appearance of the first Miller period in response to an event in which an amount of charges accumulated at a gate of the power transistor that is obtained by integrating an output signal of the current detector reaches an amount of gate charges to be detected when the first Miller period appears.
22:
- The drive circuit according to claim 18, wherein
- the control circuit is configured to determine the time period from the time point when the gate current reaches the first predetermined current value until appearance of the first Miller period in response to an event in which an amount of charges accumulated at a gate of the power transistor that is obtained by integrating an output signal of the current detector reaches an amount of gate charges to be detected when the first Miller period appears.
23:
- The drive circuit according to claim 16, wherein
- the control circuit is further configured to determine the time period from the time point when the gate current reaches the second predetermined current value until appearance of the second Miller period in response to an event in which an amount of charges accumulated at a gate of the power transistor that is obtained by integrating an output signal of the current detector reaches an amount of gate charges to be detected when the second Miller period appears. lower the gate driving capability of the drive circuit in response to an amount of charges accumulated in the power transistor in response to a turn-off command in the control signal reaching an amount of gate charges to be detected when a second Miller period appears.
24:
- The drive circuit according to claim 15, further comprising:
- an on-gate resistor connected between a positive-electrode-side voltage and a gate of the power transistor, the positive-electrode-side voltage applying a positive bias voltage to the gate;
- an off-gate resistor connected between a negative-electrode-side voltage and the gate, the negative-electrode-side voltage applying a negative bias voltage to the gate;
- and
- a semiconductor switch connected in parallel to at least one of the on-gate resistor and the off-gate resistor.
2 more elements
25:
- The drive circuit according to claim 15, the power transistor including a gate, a first electrode, and a second electrode, and the drive circuit further comprising a capacitor and a switch connected in series between the gate and the first electrode.
26:
- The drive circuit according to claim 15, the power transistor including a gate, a first electrode, and a second electrode, and the drive circuit further comprising a capacitor, a switch, and a resistor connected in series between the gate and the first electrode.
27:
- A power module comprising:
- the drive circuit according to claim 15;
- and
- the power transistor.
1 more element
28:
- The power module according to claim 27, wherein
- the power transistor is composed of a wide band-gap semiconductor wider in energy-band-gap than silicon.
29:
- The power module according to claim 28, wherein
- the wide band-gap semiconductor is any one of silicon carbide, gallium nitride, gallium oxide, and diamond.