Semiconductor structure and method for manufacturing the same

Abstract

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes (1) providing a substrate, (2) depositing a first electrode layer over the substrate, (3) depositing a magnetic tunneling junction (MTJ) layer on the first electrode layer, (4) depositing a second electrode layer on the MTJ layer, (5) patterning the first electrode layer, the MTJ layer and the second electrode layer to form a first electrode, an MTJ and a second electrode, (6) forming a first dielectric layer over the first electrode, the MTJ, and the second electrode, (7) removing a portion of the first dielectric layer, (8) forming a second dielectric layer over the first electrode, the MTJ, the second electrode, and an unremoved portion of the first dielectric layer. A semiconductor structure is also disclosed.

Dependencies are inferred from the claim text.