Dynamic random access memory
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsWan-Chi Wu, Kai-Ping Chen, Hong-Ru Liu
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Abstract
A dynamic random access memory (DRAM) includes a first bit line extending along a first direction, a first buried word line extending along a second direction, and an active region overlapping part of the first bit line and part of the first buried word line. Preferably, the active region comprises a V-shape. Moreover, the DRAM also includes at least a storage node contact overlapping one end of the active region, in which the storage node contact includes an ellipse.
Claims12
A dynamic random access memory (DRAM), comprising:
- a first bit line extending along a first direction;
- a first buried word line extending along a second direction;
- and
- an active region overlapping part of the first bit line and part of the first buried word line, wherein the active region comprises a V-shape, wherein the V-shape comprises:
- a first portion extending along the first direction, wherein the first portion comprises a first side and a second side extending along the first direction;
- a second portion extending along a third direction;
- and
- a third portion extending along a fourth direction.
(canceled)
A dynamic random access memory (DRAM), comprising:
- a first bit line extending along a first direction;
- a first buried word line extending along a second direction;
- an active region overlapping part of the first bit line and part of the first buried word line;
- and
- a first storage node contact overlapping one end of the active region, wherein the first storage node contact comprises an ellipse without overlapping the first buried word line.
Dependencies are inferred from the claim text.