Chemical mechanical polishing method

A chemical mechanical polishing (CMP) method, comprising:

• providing a substrate having a first material and a second material formed thereon, wherein the second material is over a side surface and an upper surface of the first material, and a degree of hydrophobicity or hydrophilicity of the first material is different from that of the second material;
• providing a polishing slurry on the substrate;
• performing a CMP operation to remove the second material over the upper surface of the first material to expose the upper surface of the first material and an upper surface of the second material, wherein the polishing slurry and the upper surface of the second material have a first contact angle, and the polishing slurry and the upper surface of the first material have a second contact angle;
• modifying the upper surface of the second material to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees;
• and
• continuing to perform the CMP operation on the first material and the second material with the polishing slurry.

A chemical mechanical polishing (CMP) method, comprising:

• providing a substrate having a dielectric material and a metal material formed thereon, wherein the metal material is over a side surface and an upper surface of the dielectric material, and the dielectric material and the metal material have different degrees of hydrophobicity or hydrophilicity;
• providing a polishing slurry over the substrate;
• performing a CMP operation to remove the metal material over the upper surface of the dielectric material to expose the upper surface of the dielectric material and an upper surface of the metal material;
• performing a surface treatment to the metal material to render the degree of hydrophobicity or hydrophilicity of the metal material in proximity to that of the dielectric material, such that the polishing slurry is uniformly dispensed on the upper surface of the dielectric material and the upper surface of the metal material;
• and
• continuing to perform the CMP operation on the dielectric material and the metal material with the polishing slurry uniformly dispensed on the upper surface of the dielectric material and the upper surface of the metal material.