Back to results
US 2019/0157091 A1Published application
Recessed solid state apparatuses
AssigneeTexas Instruments Incorporated
InventorsDong Seup LEE, Yoshikazu KONDO, Pinghai HAO, Sameer PENDHARKAR
Life of this patent
Estimating the term…
Abstract
An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.
Claims20
An electronic device, comprising:
- a first semiconductor layer comprising a first group III nitride;
- a second semiconductor layer located directly on the first semiconductor layer and comprising a second different group III nitride;
- a cap layer located directly on the second semiconductor layer, the cap layer comprising the first group III nitride;
- and
- a dielectric layer located over the cap layer that directly contacts the second semiconductor layer through an opening in the cap layer.
2 more elements
A method, comprising:
- providing substrate having a first semiconductor layer comprising a first group III nitride;
- forming a second semiconductor layer directly on the first semiconductor layer, the second semiconductor comprising a second different group III nitride;
- forming a cap layer directly on the second semiconductor layer, the cap layer comprising the first group III nitride;
- and
- depositing a dielectric layer over the cap layer, the dielectric layer directly contacting the second semiconductor layer through an opening in the cap layer.
2 more elements
Dependencies are inferred from the claim text.