Selective growth of sio2 on dielectric surfaces in the presence of copper

A method of selectively depositing silicon oxide on a dielectric material relative to a metal-containing surface on a substrate, the method comprising:

• (a) providing the substrate comprising the dielectric material and exposed metal-containing surface;
• (b) prior to depositing the silicon oxide, exposing the substrate to a metal-blocking reagent to selectively adsorb onto the exposed metal-containing surface;
• (c) exposing the substrate to a silicon-containing precursor to adsorb the silicon-containing precursor onto the dielectric material;
• (d) exposing the substrate to an oxidizing plasma generated in an environment comprising a weak oxidant to convert the adsorbed silicon-containing precursors to silicon oxide;
• and
• (e) exposing the substrate to a reducing agent to reduce the exposed metal-containing surface.

An apparatus for processing semiconductor substrates, the apparatus comprising:

• at least one process chamber comprising a pedestal for holding a semiconductor substrate;
• at least one outlet for coupling to a vacuum;
• a plasma generator;
• one or more process gas inlets coupled to one or more gas sources;
• and
• a controller for controlling operations in the apparatus, including machine-readable instructions for:
• prior to causing deposition of silicon oxide, causing exposure of the semiconductor substrate to a copper-blocking reagent to selectively adsorb onto an exposed copper metal surface;
• causing exposure of the substrate to a silicon-containing precursor to adsorb the silicon-containing precursor onto a dielectric material on the semiconductor substrate;
• causing exposure of the substrate to an oxidizing plasma generated in an environment comprising a weak oxidant to convert the adsorbed silicon-containing precursors to deposit silicon oxide;
• and
• causing exposure of the substrate to a reducing agent to reduce the exposed copper metal surface.