Pixel driving circuit, pixel structure and manufacturing method thereof
AssigneeKunShan Go-Visionox Opto-Electronics Co., Ltd
InventorsYanqin SONG, Jiuzhan ZHANG
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Abstract
The disclosure provides a pixel driving circuit suitable for high pixel density. The pixel driving circuit includes a switching transistor, the switching transistor adopts a dual gate field effect transistors, the dual gate field effect transistors includes a first gate electrode and a second gate electrode, and the first gate and the second gate are connected to the same scan line. The present disclosure also includes a pixel structure and a manufacture method thereof suitable for high pixel density.
Claims13
A pixel driving circuit, comprising:
- a switching transistor comprising a dual gate field effect transistor, the dual gate field effect transistor comprising a first gate electrode and a second gate electrode, and the first gate electrode and the second gate electrode being connected to a same scan line.
A pixel structure, comprising a first pixel and a second pixel adjacent to the first pixel, wherein the first pixel and the second pixel respectively comprise a pixel driving circuit, and input ends of switching transistors in the first pixel and the second pixel are connected to a same data line, wherein the pixel driving circuit comprises a switching transistor comprising a dual gate field effect transistor, the dual gate field effect transistor comprising a first gate electrode and a second gate electrode, and the first gate electrode and the second gate electrode being connected to a same scan line.
A method for manufacturing a pixel, comprising:
- forming an active layer;
- wherein the forming an active layer comprises:
- forming a strip-shaped pattern on the active layer, as a common portion pattern of a switching transistors of a pixel driving circuits in adjacent pixels, the strip-shaped patter having a long side and a short side shorter than the long side;
- forming a pattern of a dual gate field effect transistor extending toward one side of the strip-shaped pattern along the short side of the strip-shaped pattern at both ends of the strip-shaped pattern, and forming a pattern of another dual gate field effect transistor extending toward the other side of the strip-shaped pattern along the short side of the strip-shaped pattern at both ends of the strip-shaped pattern, patterns being used as patterns of the switching transistors in the pixel driving circuits of the adjacent pixels respectively.
Dependencies are inferred from the claim text.