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US 2019/0101829 A1Published application
Photoresist patterning on silicon nitride
AssigneeInternational Business Machines Corporation
InventorsIndira P. Seshadri, Ekmini Anuja De Silva, Chi-Chun Liu, Cheng Chi, Jing Guo, Luciana Meli Thompson
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Abstract
Embodiments of the present invention provide systems and methods for trapping amines. This in turn mitigates the undesired scumming and footing effects in a photoresist. The polymer brush is grafted onto a silicon nitride surface. The functional groups and molecular weight of the polymer brush provide protons and impose steric hindrance, respectively, to trap amines diffusing from a silicon nitride surface.
Claims20
A method comprising:
- dissolving a plurality of polymer brushes in a casting solvent, wherein the plurality of polymer brushes contain a first constituent unit and a second constituent unit;
- dissolving a plurality of photoresists in the casting solvent;
- wetting the plurality of photoresists;
- and
- grafting the plurality of polymer brushes to a silicon nitride surface.
2 more elements
A photoresist system comprising:
- silicon nitride deposited as a layer above a wafer;
- and
- a plurality of polymer brushes deposited above the silicon nitride layer, wherein each of the plurality of polymer brushes contains:
- a plurality of amines dispersed throughout the silicon nitride layer,
- an oxygen atom, and
- a constituent unit;
- and
- a plurality of photoresists deposited over the plurality of polymer brushes.
5 more elements
A photoresist system comprising:
- silicon nitride deposited as a layer above a wafer;
- and
- a plurality of polymer brushes deposited above the silicon nitride layer, wherein each of the plurality of polymer brushes contains:
- a plurality of amines dispersed throughout the silicon nitride layer,
- an oxygen atom,
- a first constituent unit, and
- a second constituent unit;
- and
- a plurality of photoresists deposited over the plurality of polymer brushes.
6 more elements
Dependencies are inferred from the claim text.