Method of manufacturing a semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a first fin and a second fin on the semiconductor substrate;
• a ferroelectric layer over the first fin and the second fin;
• a first gate electrode over the first fin;
• and
• a second gate electrode over the second fin, wherein the first gate electrode has a first gate width, the second gate electrode has a second gate width, the first gate width is different from the second gate width.

An integrated circuit comprising:

• a semiconductor substrate comprising a first active region, a second active region, and a third active region, wherein the first active region and the third active region are arranged on two different sides of the second active region, the first active region, the second active region, and the third active region are electrically isolated from each other;
• a first gate structure extending along a first direction and traversing the first active region and the second active region;
• and
• a second gate structure extending along the first direction in the third active region, wherein the first gate structure and the second gate structure have different gate lengths.