FIN FIELD EFFECT TRANSISTOR (FinFET) DEVICE STRUCTURE WITH DOPED REGION IN SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME

A fin field effect transistor (FinFET) device structure, comprising:

• a fin structure extended above a substrate;
• a gate structure formed over a middle portion of the fin structure;
• a source/drain (S/D) structure formed on a side of the gate structure, wherein the S/D structure comprises a gallium (Ga)-doped region;
• an inter-layer dielectric (ILD) layer surrounding the S/D structure, wherein the ILD layer is doped with gallium (Ga);
• a metal silicide layer formed over the doped region;
• and
• an S/D contact structure formed over the metal silicide layer.

A method for forming a fin field effect transistor (FinFET) device structure, comprising:

• forming a fin structure extended above a substrate;
• forming a gate structure formed over a middle portion of the fin structure;
• forming a source/drain (S/D) structure over the fin structure, wherein the S/D structure is adjacent to the gate structure;
• doping an outer portion of the S/D structure to form a doped region, wherein the doped region comprises gallium (Ga);
• forming a metal silicide layer over the doped region;
• and
• forming an S/D contact structure over the metal silicide layer.