Epitaxial Features Confined by Dielectric Fins and Spacers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A method includes receiving a substrate; forming on the substrate a semiconductor fin; an isolation structure surrounding the semiconductor fin; and first and second dielectric fins above the isolation structure and sandwiching the semiconductor fin; depositing a spacer feature filling spaces between the semiconductor fin and the first and second dielectric fins; performing an etching process to recess the semiconductor fin, resulting in a trench between portions of the spacer feature; and epitaxially growing a semiconductor material in the trench.
Claims20
A method, comprising:
- receiving a substrate;
- forming a semiconductor fin extending from the substrate;
- forming an isolation structure surrounding the semiconductor fin;
- forming first and second dielectric fins above the isolation structure and sandwiching the semiconductor fin;
- depositing a spacer feature filling spaces between the semiconductor fin and the first and second dielectric fins;
- performing an etching process to recess the semiconductor fin, resulting in a trench between portions of the spacer feature;
- and
- epitaxially growing a semiconductor material in the trench.
A method, comprising:
- providing a structure having a substrate, a semiconductor fin extending from the substrate, an isolation structure surrounding the semiconductor fin, and a dielectric fin above the isolation structure;
- depositing a spacer feature on sidewalls of the semiconductor fin and the dielectric fin;
- recessing the semiconductor fin, resulting in a trench between portions of the spacer feature;
- and
- epitaxially growing a semiconductor material in the trench.
A method, comprising:
- providing a structure having a substrate and first and second semiconductor fins above the substrate;
- depositing an isolation structure over the substrate and on sidewalls of the first and second semiconductor fins, resulting in a trench between two portions of the isolation structure that are on two opposing sidewalls of the first and second semiconductor fins;
- depositing a dielectric fin in the trench;
- recessing the isolation structure to fall below top surfaces of the first and second semiconductor fins and the dielectric fin;
- depositing an oxide layer over at least top and sidewall surfaces of the first and second semiconductor fins;
- depositing a spacer feature over the oxide layer and filling spaces between the first and second semiconductor fins and the dielectric fin;
- recessing the first and second semiconductor fins, resulting in two trenches between portions of the spacer feature;
- and
- epitaxially growing one or more semiconductor materials in the two trenches.
Dependencies are inferred from the claim text.