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US 2019/0096946 A1Published application
Imaging apparatus, method of manufacturing the same, and device
AssigneeCanon Kabushiki Kaisha
InventorsKatsunori Hirota, Keiichi Sasaki, Tsutomu Tange, Yoshiei Tanaka, Akira Ohtani
Life of this patent
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Abstract
An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
Claims14
An imaging apparatus comprising:
- a substrate including a photoelectric conversion portion;
- and
- a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion,
- wherein the silicon nitride layer contains chlorine, and
- an N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
2 more elements
A method of manufacturing an imaging apparatus, comprising:
- forming a photoelectric conversion portion in a substrate;
- and
- forming a silicon nitride layer covering at least a portion of the photoelectric conversion portion,
- wherein the silicon nitride layer contains chlorine, and
- an N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
2 more elements
A method of manufacturing an imaging apparatus, comprising:
- forming a photoelectric conversion portion in a substrate;
- and
- forming a silicon nitride layer covering at least a portion of the photoelectric conversion portion,
- wherein the silicon nitride layer is formed by using a process gas containing hexachlorodisilane and ammonia, and
- an ammonia/hexachlorodisilane ratio in the process gas is not less than 60 and is less than 120.
2 more elements
Dependencies are inferred from the claim text.