Semiconductor Switching Device Separated by Device Isolation

A device comprising:

• an isolation feature disposed in a substrate;
• a photo-sensitive device disposed in the substrate proximate to the isolation feature;
• a first gate structure at least partially disposed over the isolation feature;
• a second gate structure at least partially disposed over the isolation feature;
• a third gate structure at least partially disposed over the isolation feature between the first gate structure and the second gate structure;
• a first source/drain feature disposed in a first region of the substrate, wherein a first portion of the isolation feature extends within the substrate between the first and third gate structures such that the first region of the substrate is bounded by the first gate structure and the first portion of the isolation feature;
• and
• a second source/drain feature disposed in a second region of the substrate, wherein a second portion of the isolation feature extends within the substrate between the second and third gate structures such that the second region of the substrate is bounded by the second gate structure and the second portion of the isolation feature.

A device comprising:

• an isolation feature disposed in a substrate;
• a photo-sensitive device disposed in the substrate adjacent the isolation feature;
• a first gate structure disposed over the substrate, wherein the first gate structure includes:
• a first body portion disposed over the substrate;
• a first portion extending away from the first body portion in a first direction, the first portion disposed over the isolation feature;
• and
• a second portion extending away from the first body portion in the first direction, the second portion disposed over the isolation feature;
• a third portion extending away from the first body portion in a second direction that is opposite the first direction, the third portion disposed over the isolation feature;
• a fourth portion extending away from the first body portion in the second direction, the fourth portion disposed over the isolation feature, and
• a first source/drain feature disposed in a first region of the substrate, wherein a first portion of the isolation feature extends within the substrate from the first portion to the second portion such that the first region of the substrate is bounded by the first and second portions of the first gate structure and the first portion of the isolation feature;
• and
• a second source/drain feature disposed in a second region of the substrate, wherein a second portion of the isolation feature extends within the substrate from the third portion to the fourth portion such that the second region of the substrate is bounded by the third and fourth portions of the first gate structure and the second portion of the isolation feature.