Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods

A semiconductor device, comprising:

• an array of memory cells, memory cells of the array of memory cells comprising a capacitor coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
• a first electrode and a second electrode;
• and
• a ferroelectric material comprising hafnium oxide, zirconium oxide, or a combination thereof and bismuth between the first electrode and the second electrode.

A method of forming a semiconductor structure, the method comprising:

• forming an electrode;
• forming a ferroelectric material comprising bismuth and at least one of hafnium oxide or zirconium oxide adjacent the electrode;
• and
• forming another electrode adjacent the ferroelectric material opposite the electrode.

An electronic system, comprising:

• a processor;
• a memory array operably coupled to the processor, the memory array comprising memory cells, memory cells of the array of memory cells comprising a capacitor operably coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
• a first electrode;
• a ferroelectric material comprising hafnium oxide, zirconium oxide, or a combination thereof and bismuth adjacent the first electrode;
• and
• a second electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode;
• and
• a power supply in operable communication with the processor.