Rf power device capable of monitoring temperature and rf characteristics at wafer level

An RF power device comprising:

• a single RF power transistor;
• a pad spaced apart from the single RF power transistor and configured to transmit a temperature and RF characteristic information of the single RF power transistor to an outside;
• and
• a temperature and RF characteristic detector connected between the pad and a source of the single RF power transistor and configured to detect the temperature and the RF characteristics of the single RF power transistor,
• wherein the single RF power transistor, the pad, and the temperature and RF characteristic detector are manufactured on a same wafer.

An RF power device comprising:

• a transistor group having a plurality of RF power transistors connected with one another in parallel;
• a pad spaced apart from the transistor group and configured to transmit a temperature and RF characteristic information of the transistor group to an outside;
• and
• a temperature and RF characteristic detector connected between the pad and the ground and configured to detect the temperature and the RF characteristics of the transistor group,
• wherein the ground is connected to the plurality of RF power transistors of the transistor group, respectively, and the transistor group, the pad, and the temperature and RF characteristic detector are manufactured on a same wafer.

An RF power device comprising:

• a transistor group having a plurality of RF power transistors connected with one another in parallel;
• a pad spaced apart from the transistor group and configured to transmit a temperature and RF characteristic information of the transistor group to an outside;
• and
• a temperature and RF characteristic detector connected between the pad and a source of an RF power transistor that is closest to the pad among the transistor group, and configured to detect the temperature and the RF characteristics of the transistor group,
• wherein the transistor group, the pad, and the temperature and RF characteristic detector are manufactured on a same wafer.