Semiconductor Device and Method

A method of manufacturing a semiconductor device, the method comprising:

• depositing a seed layer over a first via over a substrate, the first via being electrically connected to a first external connection of a first die, the first die being encapsulated within an encapsulant;
• patterning a first opening into a first photoresist over the seed layer;
• electroplating a first metallization layer within the first opening of the first photoresist utilizing the seed layer;
• removing the first photoresist;
• after the removing the first photoresist, patterning a second opening into a second photoresist over the first metallization layer;
• and
• electroplating a second via within the second opening of the second photoresist utilizing the seed layer.

A semiconductor device comprising:

• a semiconductor die encapsulated within an encapsulant;
• a first via extending through a first dielectric layer to electrically couple to the semiconductor die, the first via having straight sidewalls from a top of the first via to a bottom of the first via;
• a first seed layer in electrical connection with the first via;
• a first metallization layer over and in physical contact with the first seed layer, the first metallization layer comprising a first material throughout the first metallization layer;
• a second via in direct physical contact with the first metallization layer, the second via comprising a second material throughout the second via;
• and
• a dielectric material covering sidewalls of both the first metallization layer and the second via, the dielectric material comprising a third material throughout the dielectric material, wherein a first surface of the second via facing away from the first metallization layer is exposed by the dielectric material.