Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate;
• forming a heat dissipation plate comprising a first region and a second region on the first substrate layer;
• removing the sacrificial substrate and the separation layer;
• patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region;
• forming a first element on the first substrate;
• forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element;
• and
• forming a second element on the conductive pads in the second region.