Method for manufacturing semiconductor devices

A method of manufacturing a circuit including a metal-oxide-semiconductor field effect transistor (MOSFET) disposed in a MOSFET region and a negative capacitance field effect transistor (NCFET) disposed in a NCFET region, the method comprising:

• forming a dielectric layer over a channel layer in the MOSFET region and the NCFET region;
• forming a first metallic layer over the dielectric layer in the MOSFET region and the NCFET region;
• after the first metallic layer is formed, performing an annealing operation only in the NCFET region;
• and
• after the annealing operation, removing the first metallic layer from the MOSFET region and the NCFET region,
• wherein the annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam, and
• after the annealing operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase in the NCFET region.

A method of manufacturing a circuit including a metal-oxide-semiconductor field effect transistor (MOSFET) disposed in a MOSFET region and a negative capacitance field effect transistor (NCFET) disposed in a NCFET region, the method comprising:

• forming a first dummy gate structure over a first fin structure formed in the MOSFET region and a second dummy gate structure over a second fin structure formed in the NCFET region;
• forming a first source/drain structure over the first fin structure on opposing sides of the first dummy gate structure and a second source/drain structure over the second fin structure on opposing sides of the second dummy gate structure;
• forming an interlayer dielectric layer over the first and second source/drain structures;
• removing the first dummy gate structure and the second dummy gate structure, thereby exposing a first channel region of the first fin structure and a second channel region of the first fin structure;
• forming a dielectric layer over the first and second channel regions;
• forming a first metallic layer over the dielectric layer;
• and
• after the first metallic layer is formed, performing an annealing operation only in the NCFET region;
• after the annealing operation, removing the first metallic layer from the MOSFET region and the NCFET region,
• wherein the annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam, and
• after the annealing operation, the dielectric layer becomes a ferroelectric layer including an orthorhombic crystal phase in the NCFET region.