Apparatus for forming a layer on a substrate and method of forming an amorphous silicon layer on a substrate using the same

A method of forming a layer on a substrate comprising:

• forming a thin layer on the substrate in a deposition chamber that is positioned at a side of a transfer chamber;
• loading the substrate on which the thin layer is formed into a de-hydrogen chamber from the deposition chamber via the transfer chamber, the de-hydrogen chamber being positioned at another side of the transfer chamber;
• performing a de-hydrogen process on the thin layer on the substrate in the de-hydrogen chamber;
• and
• transferring the substrate on Which the thin layer having a low hydrogen concentration is formed to a substrate holder from the de-hydrogen chamber via the transfer chamber.

An apparatus for forming a layer comprising:

• a transfer chamber connected to a load port through a load lock chamber, wherein a substrate is transferred from the load port via the load lock chamber to the transfer chamber;
• a deposition chamber positioned at a side of the transfer chamber and connected to the transfer chamber, wherein the substrate is transferred from the transfer chamber to the deposition chamber for performing a deposition process on the substrate in the deposition chamber to form the layer on the substrate;
• and
• a de-hydrogen chamber positioned at another side of the transfer chamber and connected to the transfer chamber, wherein the layer on the substrate is transferred from the deposition chamber to the de-hydrogen chamber via the transfer chamber for performing a de-hydrogen process on the layer on the substrate in the de-hydrogen chamber to reduce a hydrogen concentration in the layer.