Nonvolatile memory device and a method of programming the nonvolatile memory device

A method of programming a non-volatile memory device including a first memory Hock and a second memory block, the method comprising:

• performing a first program operation on a first memory cell, wherein the first memory cell is connected to a first word line, the first memory block, and a first string selection line;
• performing the first program operation on a second memory cell, wherein the second memory cell is connected to a second word line, the second memory block, and a second string selection line;
• performing the first program operation on a third memory cell connected to the first word line and a third string selection line;
• performing the first program operation on a fourth memory cell connected to the second word line and a fourth string selection line;
• and
• performing a second program operation on the first memory cell,
• wherein the first and second word lines are arranged on a same level with respect to a substrate, and the first, second, third and fourth string selection lines are arranged on a same level above the first and second word lines.

A method of programming a non-volatile memory device including a first memory block and a second memory block, the method comprising:

• performing a first program operation on a selected word line of the first memory block;
• performing the first program operation on a selected word line of the second memory block, wherein the first program operation on the selected word line of the second memory block overlaps with a delay operation preformed on the selected word line of the first memory block.;
• performing a second program operation on the selected word line of the first memory block;
• wherein the second program operation overlaps with a delay operation performed on the selected word line of the second memory block;
• and
• performing the second program operation on the selected word line of the second memory block.