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US 2019/0096472 A1Published application
Memory chip having reduced baseline refresh rate with additional refreshing for weak cells
AssigneeIntel Corporation
InventorsUksong KANG, John B. HALBERT
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Abstract
A method performed by a memory chip is described. The method includes specially requesting additional refreshes for weak storage cells of the memory chip that deplete their charge more rapidly than other storage cells of the memory chip. The additional refreshes are added to a distributed baseline refresh command sequence that is applied to the weak storage cells and the other storage cells. The distributed baseline refresh command sequence has a refresh rate that is determined from charge depletion characteristics of the other storage cells.
Claims20
A memory chip, comprising:
- an array of storage cells;
- embedded memory circuitry to store information that identifies weak ones of the storage cells that deplete their charge more rapidly than other ones of the storage cells;
- row hammer detection logic circuitry;
- special refresh request logic circuitry coupled to the embedded memory circuitry and the row hammer detection logic circuitry, the special refresh request logic circuitry to send first special refresh requests to a memory controller on behalf of the weak ones of the storage cells in order to refresh the weak ones of the storage cells more frequently than the other ones of the storage cells, the special refresh request logic to also send second special refresh requests upon the row hammer detection logic detecting a row hammer condition;
- and,
- command decode logic circuitry that is able to differentiate between first refresh commands that are to refresh the weak ones of the storage cells and second refresh commands that are to mitigate a row hammer hazard.
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A computing system, comprising:
- a plurality of processing cores;
- a system memory controller;
- a system memory coupled to the system memory, the system memory comprising a memory chip, the memory chip comprising a), b), and c) below:
- a) an array of storage cells;
- b) embedded memory circuitry to store information that identifies weak ones of the storage cells that deplete their charge more rapidly than other ones of the storage cells;
- c) row hammer detection logic circuitry;
- d) special refresh request logic circuitry coupled to the embedded memory circuitry and the row hammer detection logic circuitry, the special refresh request logic circuitry to send first special refresh requests to a memory controller on behalf of the weak ones of the storage cells in order to refresh the weak ones of the storage cells more frequently than the other ones of the storage cells, the special refresh request logic to also send second special refresh requests to the system memory controller upon the row hammer detection logic detecting a row hammer condition;
- and,
- e) command decode logic circuitry that is able to differentiate between first received refresh commands that are to refresh the weak ones of the storage cells and second refresh commands that are to mitigate a row hammer hazard.
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A memory chip, comprising:
- an array of storage cells;
- embedded memory circuitry to store information that identifies weak ones of the storage cells that deplete their charge more rapidly than other ones of the storage cells;
- special refresh logic circuitry coupled to the embedded memory circuitry, the special refresh logic circuitry to cause weak ones of the storage cells to receive special refreshes in order to refresh the weak ones of the storage cells more frequently than the other ones of the storage cells, wherein, weaker cells on a same memory row as less weaker cells receive refreshes at a greater rate than the less weaker cells.
A memory controller, comprising:
- refresh control logic circuitry comprising a first input to receive a baseline DRAM refresh rate and a second input to receive special refresh requests from a DRAM memory chip, the refresh control logic circuitry to control the providing of refresh signals to the DRAM memory chip according to the baseline refresh rate to refresh storage cells of the memory chip that will retain their data when refreshed at the baseline refresh rate, the refresh control logic circuitry to provide additional refresh signals to the DRAM memory chip in response to the special refresh requests in order to refresh other storage cells of the memory chip that will not retain their data when refreshed at the baseline refresh rate.
Dependencies are inferred from the claim text.