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US 2019/0094716 A1Published application
Humidity Control in EUV Lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Joy Cheng
Life of this patent
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Abstract
A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.
Claims20
A material, comprising:
- a photo-sensitive material for an extreme ultraviolet (EUV) lithography;
- a solvent;
- and
- water.
1 more element
A photoresist material, comprising:
- a plurality of chemical components selected from the group consisting of:
- a polymer, a photoacid generator, a quencher, a chromophore, a surfactant, or a cross linker, wherein the plurality of chemical components constitute a first percentage of the photoresist material;
- a solvent selected from the group consisting of:
- Propylene Glycol Monomethyl Ether (PGME) or Propylene Glycol Monomethyl Ether Acetate (PGMEA), wherein the solvent constitutes a second percentage of the photoresist material;
- and
- water, wherein the water constitutes a third percentage of the photoresist material;
- wherein the second percentage is greater than the first percentage and the third percentage.
4 more elements
A structure, comprising:
- a substrate;
- a patternable layer disposed over the substrate;
- and
- an extreme ultraviolet (EUV) lithography photoresist disposed over the patternable layer, wherein the EUV lithography photoresist comprises a mixture of a plurality of chemical components, a solvent, and water, and wherein a content of the solvent exceeds a content of the plurality of the chemical components and a content of the water within the mixture.
1 more element
Dependencies are inferred from the claim text.