Electro-optic device with semiconductor junction area and related methods

An electro-optic device, comprising:

• an optical grating coupler, comprising:
• a first semiconductor layer having a first lateral portion and a first plurality of fingers extending laterally from the first lateral portion;
• and
• a second semiconductor layer having a second lateral portion and a second plurality of fingers extending laterally from the second lateral portion, the second plurality of fingers being interdigitated with the first plurality of fingers, wherein laterally adjacent sidewalls of the first plurality of fingers and the second plurality of fingers are in physical contact to define a plurality of pn-junctions;
• and
• a circuit coupled to the optical grating coupler and configured to respectively provide a first voltage and a second voltage to the first plurality of fingers and the second plurality of fingers, wherein the first voltage and the second voltage are configured to bias the plurality of pn-junctions and change at least one optical characteristic of the optical grating coupler.

An electro-optic system, comprising:

• a first optical grating coupler;
• a second optical grating coupler;
• and
• an optical waveguide coupled between an output of the first optical grating coupler and an input of the second optical grating coupler, wherein at least one of the first optical grating coupler or the second optical grating coupler comprises:
• a first semiconductor layer of a first conductivity type, the first semiconductor layer comprising a first base and a first plurality of ridges extending away from a first major surface of the first base;
• and
• a second semiconductor layer of a second conductivity type different from the first conductivity type, a first major surface of the second semiconductor layer physically contacting a second major surface of the first base opposite the first major surface of the first base, wherein the first major surface of the second semiconductor layer and the second major surface of the first base define a semiconductor junction area.