Atomic emission spectrometer based on laser-induced plasma (lip), semiconductor manufacturing facility including the atomic emission spectrometer, and method of manufacturing semiconductor device using the atomic emission spectrometer

An atomic emission spectrometer (AES) comprising:

• a chamber configured to receive an analyte;
• at least one laser generator configured to generate laser beams;
• an optics comprising a focal optics through which the laser beams are transmitted onto a condensing point formed inside the chamber to generate plasma;
• a supplier connected to the chamber to supply the analyte into the chamber;
• and
• a spectrometer configured to receive and analyze plasma light from the plasma, and obtain data regarding the plasma light to detect elements in the analyte.

A method of manufacturing a semiconductor element, the method comprising:

• storing a chemical used for at least one of processes comprising cleaning, lithography, etching, oxidation, diffusion, deposition, and polishing;
• supplying analyte comprising a part of the chemical into an atomic emission spectrometer (AES) for analyzing the analyte;
• and
• supplying the chemical into at least one chamber for performing the at least one process according to a result of the analyzing the analyte,
• wherein the analyzing the analyte by the AES comprises:
• supplying the analyte into a chamber of the AES;
• applying laser beams into the chamber so that the laser beams are reflected by a mirror disposed in the chamber to be condensed and irradiated on the analyte to generate plasma and emit plasma light therefrom;
• and
• controlling the plasma light to emit out to a spectrometer which analyzes the plasma light.