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US 2019/0085480 A1Published application
Crystal Growth Apparatus and Related Methods
AssigneeCorner Star Limited
InventorWilliam Lynn Luter
Life of this patent
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Abstract
Crystal pulling apparatus for continuous pulling of silicon ingots in which an oxygen-containing crucible may be eliminated are disclosed. A solid silicon support having three indentations is used to hold pools of molten silicon. Silicon is added to a melting pool and weirs over into a stabilization pool and further weirs over into a growth pool from which a silicon ingot is grown.
Claims17
A crystal growth apparatus for continuous preparation of a silicon ingot from a silicon melt, the apparatus having a vertical axis with a silicon ingot being pulled upward relative the vertical axis, the crystal growth apparatus comprising:
- a base for holding a solid silicon support that has a top surface shaped for holding a silicon melting pool, a silicon stabilization pool and a silicon growth pool;
- a feed inlet for providing a continuous source of silicon material into the silicon melting pool;
- a first annular heater mounted above the silicon melting pool for melting the silicon material or for maintaining the silicon material in a molten state;
- a second annular heater mounted above the silicon stabilization pool, the second annular heater being within the first annular heater;
- and
- at least a third annular heater mounted above the silicon growth pool, the third annular heater being within the second annular heater.
3 more elements
Dependencies are inferred from the claim text.