Spectroscopic focal plane array and method of making same
AssigneeTeledyne Scientific & Imaging, LLC
InventorMajid Zandian
Life of this patent
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Abstract
A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.
Claims19
A method of providing a linearly graded epilayer on a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- providing a semiconductor material emitting device which outputs a flux having a predetermined composition and which creates epitaxial growth when directed at a substrate;
- and
- positioning said semiconductor material emitting device such that said flux impinges on said semiconductor substrate at a non-perpendicular angle to grow a first epilayer on said substrate which is linearly graded in the direction perpendicular to the growth direction.
A detector comprising a row and column array of pixels, said detector comprising:
- a semiconductor substrate;
- and
- a first epilayer on said substrate which is linearly graded in the direction perpendicular to the growth direction.
Dependencies are inferred from the claim text.