Method for producing an accumulator and use of the accumulator

2:

• The method as claimed in claim 1, wherein the first conductor track and/or the dielectric and/or the second conductor track and/or the passivation layer are arranged with a printing method.

3:

• The method as claimed in claim 1, wherein the dielectric is a sol-gel ink or a hydrogel ink, which after being applied on the first conductor track, is dried and forms the nanoporous layer with pores.

4:

• The method as claimed in claim 3, wherein the dielectric is an ink containing redox-active molecules which, after the formation of the nanoporous dielectric, can diffuse into the pores of the dielectric at the electrodes and become transformed at the electrodes.

5:

• The method as claimed in claim 1, further comprising repeating the steps to form a plurality of conductor tracks arranged orthogonally to each other in a storage array.

6:

• The method as claimed in claim 5, wherein an ink with different concentrations and/or substances is chosen for redox-active molecules of the storage array.

8:

• A storage array having a plurality of passivated electrochemical memory cells as claimed in claim 7 in a “crossbar” configuration.

9:

• The storage array as claimed in claim 8, wherein different memory cells of the storage array comprise several different redox-active molecules and/or different concentrations of a redox-active molecule.

10:

• The storage array as claimed in claim 8, wherein the storage array is a ROM storage array comprising a plurality of nanoporous dielectrics without redox-active molecules and a plurality of nanoporous dielectrics with a redox-active molecule, wherein the redox-active molecule is configured to be reversibly oxidized and reduced solely between its two oxidation states according to a reaction A↔B.

11:

• The storage array as claimed in claim 8, wherein the storage array is a WORM storage array comprising a plurality of nanoporous dielectrics with a redox-active molecule, wherein the redox-active molecule is configured to be reversibly oxidized and reduced between its two oxidation states A and B according to a first reaction A↔B and wherein the redox-active molecule additionally has at least one further irreversible oxidation state according to a second irreversible reaction B→C and/or a third irreversible reaction A→D.

12:

• The storage array as claimed in claim 8, wherein the storage array is an RW storage array comprising a plurality of nanoporous dielectrics with a redox-active molecule, wherein the redox-active molecule is configured to be reversibly oxidized and reduced between its two oxidation states A and B according to a first reaction A↔B and wherein the redox-active molecule additionally has at least one further reversible oxidation state according to a second reversible reaction B→C and/or a third reversible reaction A→D.

13:

• The storage array as claimed in claim 10, wherein the redox-active molecule is configured to be reversibly oxidized and reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured upon passing a threshold value is read as the state “1” and wherein the state 0 is read for memory cells without redox-active molecules.

14:

• The storage array as claimed in claim 11, wherein the redox-active molecule is configured to be reversibly oxidized and reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured upon passing a threshold value is read as the state 1.

15:

• The storage array as claimed in claim 14, wherein the redox-active molecule is configured to be rewritten into the irreversible oxidation state according to the reaction B→C or A→D by applying voltage to the electrodes with a write potential, so that the redox-active molecule is no longer oxidized or reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured is read as the state 0.

16:

• The storage array as claimed in claim 12, wherein the redox-active molecule is configured to be reversibly oxidized and reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured upon passing a threshold value is read as the state 1.

17:

• The storage array as claimed in claim 12, wherein the redox-active molecule is configured to be rewritten into the reversible oxidation state according to the reaction B↔C or A↔D by applying voltage to the electrodes with a write potential, so that the redox-active molecule is no longer oxidized or reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured is read as the state 0.

18:

• The storage array as claimed in claim 16, wherein the redox-active molecule is configured to be rewritten into the reversible oxidation state according to the reaction A↔B by applying voltage to the electrodes, so that the redox-active molecule is again reversibly oxidized and reduced according to the reaction A↔B by applying voltage to the electrodes with a read potential above and below the normal potential of the redox-active molecule and the current measured upon passing the threshold value is read as the state 1.

19:

• The storage array as claimed in claim 8, wherein the storage array is a ROM storage array including a plurality of memory cells with different concentrations of redox-active molecules in the dielectrics and wherein the storage array is addressed via the electrodes by read potentials and the current measured upon passing the threshold value is coordinated with different storage states according to the different concentrations, or
• wherein the storage array is an RW storage array or WORM storage array including a plurality of memory cells with different concentrations of redox-active molecules in the dielectrics generated reversibly or irreversibly by write potentials, and wherein the electrodes are addressed by read potentials and the current measured is coordinated with different storage states upon passing the threshold value.