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US 2019/0058106 A1Published application
Piezoelectric sensor, pressure detecting device, manufacturing methods and detection method
AssigneeBoe Technology Group Co., Ltd.
InventorHu Meng
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Abstract
The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.
Claims20
A piezoelectric sensor, comprising:
- a substrate;
- a thin film transistor located on the substrate and comprising an active layer;
- and
- a piezoelectric layer that is in contact with the active layer of the thin film transistor.
1 more element
A method for manufacturing a piezoelectric sensor, comprising:
- providing a substrate;
- preparing, on the substrate, a thin film transistor comprising an active layer;
- and
- forming a piezoelectric layer that is in contact with the active layer of the thin film transistor.
1 more element
Dependencies are inferred from the claim text.