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US 2019/0058065 A1Published application
Power Diode and Method of Manufacturing a Power Diode
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Mario Barusic, Markus Bina, Matteo Dainese
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Abstract
A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body: and forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region. Power diodes manufactured by the method are also described.
Claims23
A method of processing a power diode, the method comprising:
- creating an anode region and a drift region in a semiconductor body;
- and
- forming, by a single ion implantation processing step, each of an anode contact zone and an anode damage zone in the anode region.
A power diode, comprising:
- a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode:
- and
- an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone,
- wherein the anode damage zone extends into the anode region along a vertical direction no further than down to an extension level of 75 nm, measured from a surface of the semiconductor body.
1 more element
A power diode, comprising:
- a semiconductor body having an anode region and a drift region, the semiconductor body being coupled to an anode metallization of the power diode and to a cathode metallization of the power diode;
- and
- an anode contact zone and an anode damage zone, both implemented in the anode region, the anode contact zone being arranged in contact with the anode metallization, and the anode damage zone being arranged in contact with and below the anode contact zone,
- wherein fluorine is included within each of the anode contact zone and the anode damage zone at a fluorine concentration of at least 1018 atoms*cm−3.
1 more element
Dependencies are inferred from the claim text.