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US 2019/0058062 A1Published application
High dose implantation for ultrathin semiconductor-on-insulator substrates
AssigneeSTMicroelectronics S.r.l.
InventorJocelyne Gimbert
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Abstract
Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane stressors may be formed adjacent to channels of transistors formed in ultrathin semiconductor layers.
Claims20
A device, comprising:
- a substrate;
- an insulating layer on the substrate;
- an ultrathin semiconductor layer on the insulating layer, the ultrathin semiconductor layer having a first surface and a second surface opposite the first surface, the ultrathin semiconductor layer including:
- a first portion including a dopant between the first and second surface of the ultrathin semiconductor layer, the first portion having a first dopant profile and first doping level;
- a second portion adjacent to the first portion, the second portion having a second dopant profile and second doping level that are different than the first dopant profile and first doping level, respectively;
- and
- a third portion adjacent to the first portion, the first portion being between the second portion and the third portion, the third portion having a third dopant profile and a third doping level that is different than the first dopant profile and first doping level, respectively;
- and
- a transistor on the ultrathin semiconductor layer, the transistor including a channel in the first portion of the ultrathin semiconductor layer.
6 more elements
A device, comprising:
- a substrate;
- an insulating layer on the substrate;
- an ultrathin semiconductor layer on the insulating layer, the ultrathin semiconductor layer having a first surface and a second surface opposite the first surface, the ultrathin semiconductor layer including:
- a channel region including a dopant implanted between the first and second surface of the ultrathin semiconductor layer, the dopant only being present in the channel region;
- a first portion adjacent to the channel region;
- and
- a second portion adjacent to the channel region, the channel region being between the first portion and the second portion.
4 more elements
A method, comprising:
- forming a channel region by implanting a dopant in a first portion of an ultrathin semiconductor layer on an insulating layer on a substrate, the ultrathin semiconductor layer having a first surface and a second surface opposite the first surface, the dopant only being in the first portion of the ultrathin semiconductor layer between the first surface and the second surface;
- and
- forming a transistor on the ultrathin semiconductor layer, the transistor including the channel region in the first portion of the ultrathin semiconductor layer.
Dependencies are inferred from the claim text.