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US 2019/0058000 A1Published application
Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
AssigneeMicron Technology, Inc.
InventorChandra Mouli
Life of this patent
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Abstract
An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.
Claims25
A processing system comprising:
- a processor;
- an imaging device coupled to the processor, the imaging device having a plurality of pixel cells, wherein at least one of the pixel cells comprises:
- a semiconductor substrate including a strained silicon layer at an upper portion thereof,
- a photosensor for generating charge formed in an upper region of the semiconductor substrate, and
- a readout circuit comprising at least one output transistor formed on the substrate.
2 more elements
The system of 3, wherein the silicon-germanium layer has a germanium concentration of about 30% to about 40%.
A processing system comprising:
- a processor;
- and
- a plurality of pixel cells, each pixel cell comprising—
- a semiconductor substrate including a strained silicon layer at an upper portion thereof, and
- a photosensor for generating charge formed in an upper region of the semiconductor substrate.
2 more elements
The system of 13, wherein the first silicon-germanium layer has a germanium concentration of about 30% to about 40%.
A system comprising:
- a plurality of pixel cells, wherein at least one of the pixel cells comprises:
- a semiconductor substrate including a strained silicon layer at an upper portion of the semiconductor substrate, and
- a photosensor for generating charge formed in an upper region of the semiconductor substrate;
- and
- a readout circuit formed on the semiconductor substrate and comprising at least one output transistor.
2 more elements
Dependencies are inferred from the claim text.