Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsHONG-SHIK SHIN, TAE-GON KIM, YUICHIRO SASAKI
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Abstract
A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).
Claims19
A semiconductor device comprising:
- a substrate comprising a field region that defines an active region;
- source/drain regions in the active region;
- a channel region between the source/drain regions;
- a lightly doped drain (LDD) region between one of the source/drain regions and the channel region;
- and
- a gate structure on the channel region,
- wherein an upper portion of the active region comprises an epitaxial growth layer having a larger lattice constant than silicon (Si),
- wherein the source/drain regions and the LDD region are doped with gallium (Ga),
- wherein a dose of Ga in the source/drain regions is 5E13 to 5E15 atoms/cm2, and
- wherein a dose of Ga in the LDD region is 1E13 to 2E15 atoms/cm2.
3-4. (canceled)
A semiconductor device comprising:
- a substrate comprising first and second transistor regions and comprising a first material;
- a first active region in the first transistor region;
- and
- a second active region in the second transistor region and comprising source/drain regions, a lightly doped drain (LDD) region, and a channel region,
- wherein:
- an upper region of the first active region comprises a first epitaxial growth layer comprising the first material,
- an upper portion of the second active region comprises a second epitaxial growth layer that comprises a second material in excess of 50 atomic percent (at %),
- the second material is different from the first material,
- the source/drain regions and the LDD region are doped with gallium (Ga),
- a first dose of Ga in the LDD region is lower than a second dose of Ga in the source/drain regions, and
- a top surface of each of the first and second active regions is flat.
(canceled)
A semiconductor device comprising:
- an active region comprising a channel region and source/drain regions doped with gallium (Ga), wherein a dose of Ga in the source/drain regions is 5E13 to 5E15 atoms/cm2;
- a lightly doped drain (LDD) region between one of the source/drain regions and the channel region and doped with gallium (Ga), wherein a dose of Ga in the LDD region is 1E13 to 2E15 atoms/cm2;
- a channel silicon germanium (c-SiGe) layer that constitutes an upper portion of the active region and comprises Ge in excess of 50 atomic percent (at %);
- and
- a gate structure on the channel silicon germanium (c-SiGe) layer and comprising a high-k gate insulating layer and a metal gate electrode.
(canceled)
Dependencies are inferred from the claim text.