Semiconductor structure and fabrication method thereof
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorYukihiro Nagai
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a first interlayer dielectric (ILD) layer disposed on a semiconductor substrate. A metal pad is disposed in the first ILD layer. A contact self-alignment structure is disposed on the first ILD layer. The contact self-alignment structure has an opening that is disposed directly above the metal pad. A second interlayer dielectric (ILD) layer is disposed on the first ILD layer. A contact plug penetrates through the second ILD layer and is electrically connected to the metal pad via the opening of the contact self-alignment structure.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- a first interlayer dielectric (ILD) layer on the semiconductor substrate;
- a metal pad disposed in the first ILD layer;
- a contact self-alignment structure disposed on the first ILD layer, wherein the contact self-alignment structure comprises an opening that is disposed directly above the metal pad;
- a second interlayer dielectric (ILD) layer on the first ILD layer;
- and
- a contact plug penetrating through the second ILD layer and the first ILD layer.
A method for fabricating a semiconductor structure, comprising:
- providing a semiconductor substrate;
- forming a first interlayer dielectric (ILD) layer on the semiconductor substrate;
- forming a metal pad in the first ILD layer;
- forming a contact self-alignment structure on the first ILD layer, wherein the contact self-alignment structure comprises an opening that is disposed directly above the metal pad;
- forming a second interlayer dielectric (ILD) layer on the first ILD layer;
- and
- forming a contact plug penetrating through the second ILD layer and the first ILD layer.
Dependencies are inferred from the claim text.