Methods of measuring electrical characteristics during plasma etching
AssigneeSkyworks Solutions, Inc.
InventorsDaniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
Life of this patent
Estimating the term…
Abstract
Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.
Claims20
A method to measure electrical characteristics of wafer etching in a plasma etcher, the method comprising:
- clamping a wafer against a feature plate using a clamp having one or more electrical measurement holes;
- and
- measuring at least one electrical characteristic of the feature plate after passing plasma ions through the one or more electrical measurement holes of the clamp to impact the feature plate.
A method to measure electrical characteristics of wafer etching in a plasma etcher, the method comprising:
- measuring at least one electrical characteristic of a feature plate after passing plasma ions through at least one electrical measurement hole of a clamp that is disposed above the feature plate, the plasma ions impacting the feature plate through the at least one electrical measurement hole;
- and
- controlling a formation of at least one feature formed in a wafer based on the measured at least one electrical characteristic, the wafer clamped against the feature plate by the clamp.
Dependencies are inferred from the claim text.