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US 2019/0057849 A1Published application
Physical Vapor Deposition Chamber Particle Reduction Apparatus And Methods
AssigneeApplied Materials, Inc.
InventorsVibhu Jindal, Sanjay Bhat, Majeed A. Foad
Life of this patent
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Abstract
Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.
Claims20
A physical vapor deposition chamber comprising:
- a chamber wall defining an inner volume within the physical vapor deposition chamber;
- a backing plate configured to support a sputtering target, the backing plate disposed in an upper section of the inner volume;
- a substrate support having a support surface to support a substrate below the backing plate;
- a central region between the backing plate and the substrate support;
- a process kit including a shield surrounding the central region, the shield comprising a cylindrical body having an inner surface, an upper portion and a lower portion;
- a first electrode assembly positioned on an inner surface of the shield;
- and
- a magnet positioned on the inner surface of the shield, the first electrode assembly positioned and configured to create an electromagnetic field that laterally displaces particles generated during a physical vapor deposition process and the first electrode assembly and the magnet cooperate to prevent the particles from contacting a substrate on the substrate support during the physical vapor deposition process.
5 more elements
A method of processing a substrate in a physical vapor deposition chamber, the method comprising:
- placing a substrate on a substrate support within an inner volume of the physical vapor deposition chamber defined by a chamber wall, the inner volume including an upper section and a lower section, the substrate support in the lower section;
- sputtering material from a target of source material located above the substrate support in an upper section, there being a central region between the target of source material and the substrate support and process kit including a shield surrounding the central region, the shield comprising a cylindrical body having an inner surface, an upper portion and a lower portion, and a magnet positioned on an inner surface of the lower portion of the shield;
- and
- applying a voltage to a first electrode assembly positioned on an inner surface of the upper portion of the shield to laterally displace particles generated during a physical vapor deposition process and prevent the particles from contacting a substrate on the substrate support during the physical vapor deposition process.
1 more element
A method of manufacturing an EUV mask blank in a physical vapor deposition chamber, the method comprising:
- depositing alternating layers of a multilayer reflector material by sputtering material from a target on a substrate in a multi-cathode physical vapor deposition chamber, the substrate placed within an inner volume of the physical vapor deposition chamber defined by a chamber wall, the inner volume including an upper section, a lower section and a central region, and the substrate surrounded by a shield surrounding the central region, the shield having an inner surface, an upper portion and a lower portion.
- laterally deflecting particles generated during the sputtering with an electric field generated at the upper portion of the shield to prevent particles from being deposited in the substrate;
- and
- generating a magnetic field at a lower portion of the shield to prevent particles from being deposited on the substrate.
1 more element
Dependencies are inferred from the claim text.