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US 2019/0056671 A1Published application
Overlay mark structures
AssigneeGlobalfoundries Inc.
InventorsLei Sun, John Zhang, Shao Beng Law, Guoxiang Ning, Xunyuan Zhang, Ruilong Xie
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to overlay mark structures and methods of manufacture. The method includes: forming an overlay mark within a layer of a stack of layers; increasing a density of an upper layer of the stack of layers, above the layer, the increased density protecting the overlay mark; and polishing the upper layer or one or more layers above the upper layer of the stack of layers.
Claims22
A method comprising:
- forming an overlay mark within a layer of a stack of layers;
- increasing a density of an upper layer of the stack of layers by forming a fill material and a barrier metal on the fill material, which is different than the fill material, above the layer, the increased density protecting the overlay mark;
- and
- polishing the upper layer or one or more layers above the upper layer of the stack of layers.
1 more element
A method comprising:
- forming a mark within a first layer of a structure;
- forming a second layer over the first layer;
- forming a plurality of vias in the second layer to increase a density of the second layer compared to the first layer;
- polishing the second layer or layers above the second layer;
- protecting the mark within the first layer by depositing a capping layer and an organic planarization layer directly over the mark;
- and
- removing material from the plurality of vias in the second layer, which are on sides of the mark.
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Dependencies are inferred from the claim text.