Image sensor and electronic camera

The image sensor according to c;aim 1, wherein:

• the photoelectric conversion unit is provided on a surface of the first semiconductor layer onto which incident light is incident, and the transfer unit and the accumulation unit are provided on a surface of the first semiconductor layer on the second semiconductor layer side.

An image sensor comprising:

• a first semiconductor layer provided with a pixel including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit;
• and
• a semiconductor layer that is arranged to be stacked on the first semiconductor substrate, in which a supply unit is provided, the supply unit supplying the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit.