Galvanically isolated amplifiers and related methods
AssigneeSolantro Semiconductor Corp.
InventorsChristian COJOCARU, Igor MILETIC, Tudor LIPAN, Michael SAWIRES
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AssigneeSolantro Semiconductor Corp.
InventorsChristian COJOCARU, Igor MILETIC, Tudor LIPAN, Michael SAWIRES
Estimating the term…
A Galvanically Isolated Amplifier (GIA) includes an isolation barrier to galvanically isolate high voltage circuitry from low voltage circuitry. The high voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to ground potential at a first potential relative to the ground potential. The low voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to the ground potential at a second potential, the second potential being smaller than the first potential. A Radio Frequency (RF) carrier is digitally Phase Shift Keying (PSK) modulated for transmission across the isolation barrier. The unmodulated RF carrier could also be transmitted across the isolation barrier. PSK modulation could be applied to the RF carrier based on a test waveform to generate a PSK-modulated test signal for transmission while a voltage transient is applied between the high voltage circuitry and the low voltage circuitry.
A Galvanically Isolated Amplifier (GIA) comprising:
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.