Semiconductor laser and method of producing a semiconductor laser and wafer

A semiconductor laser comprising:

• a semiconductor layer sequence comprising two opposite facets defining a resonator, and an active zone configured between the two facets,
• a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone,
• a contact metalization applied on a top side of the ridge waveguide facing away from the active zone, and
• a current flow layer in direct contact with the contact metalization,
• wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two facets over the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises a subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two facets over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide,
• the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and
• the section is free of the current flow layer.

A method of producing a semiconductor laser comprising:

• providing a semiconductor layer sequence comprising an active zone, wherein the semiconductor layer sequence comprises a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone, wherein a contact metalization is applied on a top side of the ridge waveguide facing away from the active zone,
• defining two breaking lines extending transversely with respect to the longitudinal axis of the ridge waveguide and parallel to the top side of the semiconductor layer sequence,
• applying a current flow layer on the semiconductor layer sequence such that, after the applying, the current flow layer is in direct contact with the contact metalization,
• wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two breaking lines over the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises at least one subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two breaking lines over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer, and
• breaking the semiconductor layer sequence along the two breaking lines such that two opposite facets defining a resonator are formed along the two breaking lines, wherein the active zone is configured between the two facets.

A wafer comprising:

• a semiconductor layer sequence comprising an active zone, wherein the semiconductor layer sequence comprises a ridge waveguide configured from the semiconductor layer sequence as an elevation of a top side of the semiconductor layer sequence, said elevation lying above the active zone, and the longitudinal axis of which is oriented along the active zone, and a contact metalization is applied on a top side of the ridge waveguide facing away from the active zone,
• two breaking trenches defining two breaking lines extending transversely with respect to the longitudinal axis of the ridge waveguide and parallel to the top side of the semiconductor layer sequence,
• a current flow layer in direct contact with the contact metalization,
• wherein the top side of the semiconductor layer sequence comprises a section adjoining one of the two breaking linesover the width of said section relative to a longitudinal axis of the ridge waveguide, the section comprises at least one subsection of the top side of the ridge waveguide, the subsection extends in a manner adjoining said one of the two breaking lines over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer.