Light-emitting device and electronic apparatus

A light-emitting device, the light-emitting device comprising:

• a reflective layer;
• a semi-transmissive reflective layer;
• a light-emission functional layer disposed between the reflective layer and the semi-transmissive reflective layer;
• a first pixel electrode disposed between the reflective layer and the light-emission functional layer;
• a second pixel electrode disposed between the reflective layer and the light-emission functional layer;
• a third pixel electrode disposed between the reflective layer and the light-emission functional layer;
• an optical path adjustment layer having a first adjustment layer formed of silicon nitride, a second adjustment layer formed of silicon oxide, and a third adjustment layer formed of silicon oxide;
• a pixel definition layer with a top surface and a bottom surface opposite the top surface that is formed of an insulating material including silicon compound, the pixel definition layer has a first aperture part corresponding the first pixel electrode, a second aperture part corresponding the second pixel electrode, and a third aperture part corresponding the third pixel electrode,
• wherein the first adjustment layer is disposed between the first pixel electrode and the reflective layer,
• wherein the first adjustment layer and the second adjustment layer are disposed between the second pixel electrode and the reflective layer,
• wherein the first adjustment layer, the second adjustment layer, and the third adjustment layer are disposed between the third pixel electrode and the reflective layer,
• wherein the pixel definition layer physically contacts the optical path adjustment layer, the light-emission functional layer, the first pixel electrode, the second pixel electrode, and the third pixel electrode, and
• wherein a film thickness of the pixel definition layer between the top surface and the bottom surface along a vertical line and between the physical contact with the optical path adjustment layer and the physical contact with the light-emission functional layer is less than a film thickness of the second adjustment layer and a film thickness of the third adjustment layer.