Quantum dots light-emitting diode and method for manufacturing the same
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorKaifeng Zhou
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Abstract
Disclosed are a quantum dots light-emitting diode and a method for manufacturing the same. The quantum dots light-emitting diode includes an anode, which is arranged on a substrate; a first hole injection layer, which is a neutral hole injection layer and arranged on the anode; a second hole injection layer, which is arranged on the first hole injection layer; a quantum dots light-emitting layer, which is arranged on the second hole injection layer; and a cathode, which is arranged on the quantum dots light-emitting layer.
Claims11
A quantum dots light-emitting diode, comprising:
- an anode, which is arranged on a substrate;
- a first hole injection layer, which is a neutral hole injection layer and arranged on the anode;
- a second hole injection layer, which is arranged on the first hole injection layer;
- a quantum dots light-emitting layer, which is arranged on the second hole injection layer;
- and
- a cathode, which is arranged on the quantum dots light-emitting layer.
A method for manufacturing a quantum dots light-emitting diode, wherein the method comprises:
- forming an anode on a substrate;
- forming a neutral first hole injection layer on the anode;
- forming a second hole injection layer on the first hole injection layer;
- forming a quantum dots light-emitting layer on the second hole injection layer;
- and
- forming a cathode on the quantum dots light-emitting layer.
Dependencies are inferred from the claim text.